Experimental Study of Si- and SiC-Based Voltage Source Inverters

Inhalt:
This paper shows and compares the performance of hybrid three-level inverters realized with Silicon Carbide Trench MOSFETs and Schottky Barrier diodes as well as Silicon IGBTs. Possible improvements over well-established three-level, pure Silicon solutions are demonstrated using real measurement data. A short comparison with a two-level SiC MOSFET solution completes the paper. The Silicon devices used within the tests were TRENCHSTOP(exp TM) and TRENCHSTOP(exp TM) 5 IGBTs as well as Rapid and EMCON diodes. The Silicon Carbide devices were CoolSiC(exp TM) T-MOSFETs and Generation 5 diodes. All semiconductors were assembled in discrete packages.