Technological Possibilities of New Silicon-Carbide Mosfets in Power-Inverter for the Inductive Energy Transfer

Konferenz: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.05.2017 - 18.05.2017 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2017

Seiten: 5Sprache: EnglischTyp: PDF

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Autoren:
Warkentin, Martin; Vosshagen, Thomas; Turki, Faical (Paul Vahle GmbH & Co. KG, Germany)

Inhalt:
This paper includes the development of a gate driver with a boost circuit for new silicon-carbide mosfet modules to switch them with a frequency of 140 kHz. An oscillating test circuit is build up to verify the switching losses and the resulting maximum output power for using them in an inverter for the inductive energy transfer.