STMicroelectronics Super-Junction and UltraFAST MOSFET vs IGBT Technologies in Low Power Motor Drives

Konferenz: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.05.2017 - 18.05.2017 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2017

Seiten: 5Sprache: EnglischTyp: PDF

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Autoren:
Parisi, Carmelo; Belverde, Gaetano; Corsaro, Alessio (STMicroelectronics, Catania, Italy)

Inhalt:
Market is demanding for more and more efficient, compact and robust systems in the motor drive applications, especially in appliance field. STMicroelectronics offers a wide choice of power switch technologies for different operating conditions to meet the market requirements, such as IGBT, UltraFAST Power MOSFET and the newest Super-Junction Power MOSFET. A detailed comparison, in terms of electrical and thermal performance, among the three aforementioned technologies, assembled in the Intelligent Power Module SLLIMM(TM)-nano (Small Low-Loss Intelligent Molded Module), is provided in a low power motor drive application.