GaN Gate Injection Transistor for Reliable Power Supply Solution
Konferenz: PCIM Asia 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
27.06.2017 - 29.06.2017 in Shanghai, China
Tagungsband: PCIM Asia 2017
Seiten: 7Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Ban How, Howard Sin (Panasonic Industrial Devices Semiconductor Asia, Singapore)
This paper reviews the robustness of the GaN Gate Injection Transistor (GaN GIT) demonstrated through different reliability testing methods. Besides conventional tests applied for Si based on JEDEC requirement, additional tests beyond JEDEC include dynamic high temperature operating life test and short circuit capability test are performed on the GaN GIT. Examples of actual implementation on switching power system applications and devices enabling the innovation will be described. Recent advancements in GaN GIT technology include Through Recessed and Regrowth Gate (TRRG) technology for realizing process stability and 1.7 kV vertical GaN GIT on bulk GaN substrates are also presented.