7th Generation IGBT Modules Integrating Converter Inverter Brake
Konferenz: PCIM Asia 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
27.06.2017 - 29.06.2017 in Shanghai, China
Tagungsband: PCIM Asia 2017
Seiten: 6Sprache: EnglischTyp: PDF
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Autoren:
Hu, Bo; Ma, Xiankui; Song, Gaosheng (Mitsubishi Electric & Electronics (Shanghai) Co., Ltd, China)
Inhalt:
The paper introduces a new type IGBT (Insulated Gate Bipolar Transistor) module integrating CIB (Converter Inverter Brake) circuit. The new generation IGBT modules use the 7th generation chip technology and novel assembling structure to assure low power loss, low thermal rise and high reliability. Meanwhile, abundant products line-up can meet various application fields and various power ratings. What’s more, the comparison with Mitsubishi Electric 6th generation IGBT modules was showed. At last, the feasibility of 37 kW general purpose inverter by using 1200 V / 150 A CIB IGBT module was discussed.