Influence of parasitic resistance on current sharing of IGBT module
Konferenz: PCIM Asia 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
27.06.2017 - 29.06.2017 in Shanghai, China
Tagungsband: PCIM Asia 2017
Seiten: 4Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Xie, Longfei; Ye, Na; Cao, Lin; Yu, Kai (CRRC Yongji Electric Co., Ltd, China)
In order to get the high current conducting capability, multiple IGBT chips are connected in paralleled in an IGBT Module. However, the current flowing the IGBT chips is different with the influence of IGBT Module parasitic parameter. If the current difference is too large, it will affect IGBT Module reliability. In this paper, numerical simulation is used to investigate the relationship of current sharing with the IGBT Module parasitic resistance. An equipment circuit based on chip and DBC Layout is constructed. Also, the design method is proposed to reduce the impact of parasitic resistance on current sharing.