Research on Reversing Current Phenomenon of the Dual-source Driver for SiC BJT
Konferenz: PCIM Asia 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
27.06.2017 - 29.06.2017 in Shanghai, China
Tagungsband: PCIM Asia 2017
Seiten: 6Sprache: EnglischTyp: PDF
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Autoren:
Qin, Haihong; Liu, Qing; Zhang, Ying; Yu, Junyue; Wang, Dan (Nanjing University of Aeronautics and Astronautics, China)
Zhao, Chaohui (Shanghai Electric Machinery College, China)
Inhalt:
As SiC BJT is a current-controlled device, it becomes a trivial issue to achieve both a low power consumption and competitive switching performance. The dual-source base driver is a popular candidate to achieve these objectives. However, due to capacitor clamping, there is a reversing current flowing through the base resistor at turn-off moment, which increases the power loss. This paper investigates the reasons for reversing current phenomenon and introduces the new control method to prevent it. The proposed gate driver is verified by LTSPICE simulation and experimental results.