Evaluating Self-commutated Reverse Conduction Characterization of Enhancement-Mode GaN HEMT for Application
Konferenz: PCIM Asia 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
27.06.2017 - 29.06.2017 in Shanghai, China
Tagungsband: PCIM Asia 2017
Seiten: 6Sprache: EnglischTyp: PDF
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Autoren:
Qin, Haihong; Zhang, Ying; Wang, Dan; Fu, Dafeng (Nanjing University of Aeronautics and Astronautics, China)
Zhao, Chaohui (Shanghai DianJi University, China)
Inhalt:
Enhancement-mode GaN switches has been developed with up to 650 V blocking capability, fast switching, and low conduction losses in commercial devices. Self-commutated reverse conduction is a very important characteristic of enhancement-mode GaN HEFT, especially for synchronous rectification topologies. This paper introduces the new commercial enhancementmode GaN HEMT and its self-commutated reverse conduction characteristic. To compare three schemes: only an eGaN, only a SiC SBD, eGaN with an anti-parallel SiC SBD respectively, a DPT circuit is designed to analyse the influence of different schemes on switching characteristics and power losses of eGaN HEMT.