How to apply the better performance of SiC modules

Konferenz: PCIM Asia 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
27.06.2017 - 29.06.2017 in Shanghai, China

Tagungsband: PCIM Asia 2017

Seiten: 5Sprache: EnglischTyp: PDF

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Ma, Xiankui; Song, Gaosheng; Zhang, Xing (Hefei University of Technology, Mitsubishi Electric Joint Laboratory, China)
Li, Jianfei (Sineng Electric Co., Ltd., Wuxi, China)

Comparing to Si devices, SiC devices has better performance on both conduction power loss and switching power losses. And there many types of SiC power devices, including discrete MOSFET, SiC MOSFET module and SiC IPMs. It will be helpful to select a proper power module for our application if we could have a good understanding on all these kinds of SiC modules. This paper will introduce these SiC modules and explain how to realize a better system design by applying using the better performance of SiC modules.