Applying the 2D-Short Circuit Detection Method to SiC MOSFETs including an advanced Soft Turn Off
Konferenz: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05.06.2018 - 07.06.2018 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2018
Seiten: 7Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Hofstetter, Patrick; Hain, Stefan; Bakran, Mark-M. (University of Bayreuth, Germany)
To address the problem of small short circuit withstand times of SiC MOSFETs, this paper presents a short circuit protection, which detects the fault close to the earliest time possible and turns off the device safely. For the detection, the 2D-short circuit detection method [1, 2] was adapted to SiC MOSFETs. As SiC MOSFETs have to be turned off softly, a turn-off strategy is shown which is able to turn the device off during a short circuit type 1 and a short circuit type 2 in an optimized way.