Applying the 2D-Short Circuit Detection Method to SiC MOSFETs including an advanced Soft Turn Off

Inhalt:
To address the problem of small short circuit withstand times of SiC MOSFETs, this paper presents a short circuit protection, which detects the fault close to the earliest time possible and turns off the device safely. For the detection, the 2D-short circuit detection method [1, 2] was adapted to SiC MOSFETs. As SiC MOSFETs have to be turned off softly, a turn-off strategy is shown which is able to turn the device off during a short circuit type 1 and a short circuit type 2 in an optimized way.