A 6.5 kV 1000 A IGBT Module with Side Gate HiGT

Konferenz: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05.06.2018 - 07.06.2018 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2018

Seiten: 7Sprache: EnglischTyp: PDF

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Koguchi, Hiroyuki; Arai, Taiga; Kushima, Takayuki; Matsumoto, Tatsuya; Kawano, Hiroki; Saiki, Takahiro; Oda, Tetsuo (Hitachi Power Semiconductor Device Ltd., Japan)
Shiraishi, Masaki (Hitachi Ltd., Japan)

A 6500V 1000A IGBT module was developed, implementing a side wall gate HiGT (High Conductivity IGBT), benefiting from low Cres and fine pattern cell wall. It realizes a 10% lower combined Eon+Err and 10% lower VCE(sat) against an equivalent planar gate HiGT structure. In addition, superior dv/dt controllability of reverse recovery is confirmed. The associated package merit is a maximum junction temperature of 150deg C, an increase of 25K, by both improved die thermal stability and especially the application of ultrasonic welding processes. The thermal resistance Rth(j-c)_IGBT and Rth(j-c)_Diode are decreased by 6% and 20% when benchmarked against past package design applying a planar gate HiGT (also 6.5kV). Inverter loss simulation reveals that the output current of the new 6.5kV modules can be increased by 33% versus established planar gate modules in the switching frequency range of 100Hz-1kHz.