The Third Generation 6.5 kV HiPak2 Module Rated 1000 A and 150 °C

Konferenz: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05.06.2018 - 07.06.2018 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2018

Seiten: 8Sprache: EnglischTyp: PDF

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Papadopoulos, Charalampos; Boksteen, Boni; Andenna, Maxi; Prindle, Daniel; Buitrago, Elizabeth; Hartmann, Samuel; Matthias, Sven; Corvasce, Chiara; Bauer, Friedhelm; Bellini, Marco; Vemulapati, Umamaheswara; Paques, Gontran; Schnell, Raffael; Kopta, Arnost; Rahimo, Munaf (ABB Switzerland Ltd, Semiconductors, Switzerland)

In this paper, we introduce a new 6.5kV 150deg C capable 1000A rated HiPak2 module based on the Enhanced Planar (EP) IGBT and Field Shielded Anode (FSA) diode concepts. Design modifications for both the Insulator Gate Bipolar Transistor (IGBT) and diode were introduced to achieve lower leakage currents and hence an increase in the maximum operating junction temperature. Furthermore, the devices have seen a reduction of the termination width and device thickness in order to achieve larger active areas and a higher current rating. In addition, by redesigning the substrate layout, an increase of the diode chip size was possible to match the improved IGBT performance. The paper will provide design details and experimental demonstration at chip and module levels for the finalized 6.5kV 150deg C 1000A rated HiPak2.