An Isolated Voltage-Source Integrated SiC Gate Driver IC with a Slew Rate Adjusting for Gate-Resistance-Free
Konferenz: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05.06.2018 - 07.06.2018 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2018
Seiten: 4Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Kawai, Yasufumi; Nagai, Shuichi; Tabata, Osamu; Enomoto, Shingo; Choe, Songbaek; Negoro, Noboru; Anda, Yoshiharu; Hatsuda, Tsuguyasu (Panasonic Corporation, Osaka, Japan)
This work presents a novel galvanic isolated gate driver IC, which drives a SiC power device by itself without any isolated power supplies, buffer IC’s and gate resistances due to its internal wireless signal power transmission and equipped slew rate adjusting function. Instead of buffer ICs, since this gate driver has internal transistors whose switching speed can be variable by outer resistance, it can adjust the dV/dt of the power device. The fabricated compact gate driver with a 5V power supply successfully drives a 120A SiC power device stably up to 30 kHz. This demonstrates a new technique to drive a SiC power device without negative gate bias at off-state by eliminating the gate inductance.