6.5-kV Full-SiC Power Module (HV100) with SBD-embedded SiC-MOSFETs

Konferenz: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05.06.2018 - 07.06.2018 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2018

Seiten: 7Sprache: EnglischTyp: PDF

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Nakashima, Jun-ichi; Fukumoto, Akihisa; Obiraki, Yoshiko; Oi, Takeshi; Mitsui, Yohei; Nakatake, Hiroshi; Toyoda, Yoshihiko; Nishizawa, Akinori; Kawahara, Koutarou; Hino, Shiro; Watanabe, Hiroshi (Advanced Technology R&D Center, Mitsubishi Electric Corp., 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo, Japan)
Negishi, Tetsu; Iura, Shin-ichi (Power Device Works, Mitsubishi Electric Corp., 1-1-1 Imajukuhigashi, Nishi-Ku, Fukuoka, Japan)

Mitsubishi Electric has developed the first 6.5-kV Full SiC power module (all semiconductor devices are SiC devices) with the new highly insulated standardized package with 100 mm x 140 mm footprint, called HV100. We optimized the internal structure of the HV100 using an electromagnetic simulation and a circuit simulation, and verified stable electrical characteristics by experiments. The HV100 has been equipped the newly developed 6.5-kV Schottky-Barrier-Diode (SBD) embedded SiC-MOSFETs to improve the power density of the power module. Furthermore, embedding SBDs can avoid bipolar degradation by making the body diode inactive. We compared the electrical properties of the conventional Si-IGBT power module, the SiC-MOSFET power module without external SBDs and the SBD-embedded SiC-MOSFET power module. As the result, the SBD-embedded SiC-MOSFET has clear advantages in high-temperature and high-frequency applications compared with the Si-IGBT and SiC-MOSFET.