Is an Antiparallel SiC-Schottky Diode Necessary? Calorimetric Analysis of SiC-MOSFETs Switching Behavior

Konferenz: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05.06.2018 - 07.06.2018 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2018

Seiten: 7Sprache: EnglischTyp: PDF

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Kreutzer, Otto; Billmann, Markus (Fraunhofer Institute IISB, Germany)
Maerz, Martin (FAU Erlangen-Nuremberg, Germany)

Within this paper the switching losses of a Wolfspeed 25mOhm bare die SiC-MOSFET are measured in a hard switching 800 V DCDC-converter with five different commutation partners. A small and a large SiC Schottky diode, an SiC-MOSFET body diode and a combination of body and Schottky diode are compared at different switching speeds and switching currents. The results show quite well the reverse recovery charge dependence of SiC-MOSFET’s body diode on switching speed. In contrast to common electric measurements where losses are calculated, the calorimetric measurements reveal exactly what shall be quantified: The temperature rise of the switching MOSFET