Sintering Cu Bonding Paste: Cycle Reliability and Applications

Konferenz: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05.06.2018 - 07.06.2018 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2018

Seiten: 6Sprache: EnglischTyp: PDF

Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt

Nakako, Hideo; Sugama, Chie; Kawana, Yuki; Negishi, Motohiro; Yanaka, Yuichi; Ishikawa, Dai; Ejiri, Yoshinori (Hitachi Chemical Co., Ltd., Japan)

We have developed three Cu bonding pastes that can be sintered by three different processes. The first is a Cu bonding paste that can be sintered without the application of pressure. The adherend can be Cu, Ni, Au, Ag, or Pd and a temperature above 225 °C is required. A hydrogen environment is necessary throughout the sintering process. The maximum bondable chip size is 7 mm x 7 mm on a Cu plate and 10 mm x 10 mm square on a direct bonded Cu (DBC) or active metal brazed Cu (AMC) substrate. The second Cu paste can be sintered by the heat press process, in which a nitrogen environment can be used and chips up to 13 mm x 13 mm can be bonded at a pressure of 5 MPa or greater and a temperature of 250 °C or above. The third paste can be used when the diameter of the bonding region is less than 150 µm; here, sintering under formic acid, without the application of pressure, can be used. In this case, the adherend can be Cu, Au, Ag, or Pd.