High Dynamic Stress on SiC Trench MOSFET Body Diodes and their Behaviour
Konferenz: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05.06.2018 - 07.06.2018 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2018
Seiten: 8Sprache: EnglischTyp: PDF
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Autoren:
Maerz, Andreas; Bertelshofer, Teresa; Bakran, Mark-M. (University of Bayreuth, ZET, Germany)
Inhalt:
In this paper state-of-the-art SiC trench MOSFET’s body diodes are investigated under high dynamic stress during reverse-recovery and in parallel configuration of a power module. Measurements on SiC MOSFET body diodes under high dynamic stress show the effect of a clamping of the drainsource- voltage together with a generation of additional charge carriers at turn-off. This paper analyses the cause of this effect and its dependence on switching speed and commutation inductance.