Reliability and Ruggedness of SiC Trench MOSFETs for Long-Term Applications in Humid Environment
Konferenz: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05.06.2018 - 07.06.2018 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2018
Seiten: 4Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Voss, Ingo; Basler, Thomas; Friedrichs, Peter; Rupp, Roland (Infineon Technologies AG, Germany)
Aichinger, Thomas (Infineon Technologies, Austria)
SiC Trench MOSFETs are planned to be used in long-term outdoor applications like solar, drives and EV charging stations. This means that the reliability of SiC Trench MOSFETs has to be ensured and verified by extended standard reliability tests and application relevant tests. In this paper, the performed tests and the results after stress are presented. The results show that the investigated SiC Trench MOSFET has a high reliability of gate oxide, can withstand humidity and is able to handle short-circuit condition. The investigations have shown that the device is ready to fulfill the demanding AEC Q101 drift criteria.