High-Frequency and High-Density Design of all GaN Power Supply Unit

Konferenz: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05.06.2018 - 07.06.2018 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2018

Seiten: 5Sprache: EnglischTyp: PDF

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Yu, Ruiyang; Huang, Qingyun; Chen, Tianxiang; Huang, Alex Q. (University of Texas at Austin, USA)
Ribarich, Tom (Navitas Semiconductor, USA)

The GaN FETs have the capability of faster switching and lower on resistance than Silicon FETs. In many cost and space sensitive applications, GaN FETs can achieve high power density solution. This paper presents the design of high frequency high efficiency all GaN FETs solution for 240Vac to 48Vdc 3.2kW power supply unit (PSU). The PUS consists of an interleaved totem pole power factor corrector (PFC) with triangular current mode (TCM) and a LLC resonant converter. Zero voltage switching (ZVS) can be achieved for both PFC and LLC converter which increase the PSU switching frequency as well as power density.