Comparison Between an Interleaved Boost Converter Using Si MOSFETs Versus GaN HEMTs

Konferenz: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05.06.2018 - 07.06.2018 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2018

Seiten: 8Sprache: EnglischTyp: PDF

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Ravyts, Simon; Dalla Vecchia, Mauricio; Zwysen, Jeroen; van den Broeck, Giel; Driesen, Johan (KULeuven, Belgium)

This paper presents an experimental comparison between two prototypes of an interleaved Boost converter for applications in Building Integrated Photo- Voltaic (BIPV) systems. The first prototype is designed with Si MOSFETs and operates at a switching frequency of 100 kHz. The second version, using GaN HEMTs, is targeted to work at 200 kHz or higher. General design equations are given such that the passive components can be sized and an estimation of the efficiency can be made. It is shown that an optimal switching frequency can be found and that this optimum is mainly dependent on the choice of the switch and the inductor. Experimental results present the conversion efficiency, switching transients and thermal performance of the developed prototypes.