LV100 High Voltage Dual Package in Paralleling Operation

Konferenz: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05.06.2018 - 07.06.2018 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2018

Seiten: 6Sprache: EnglischTyp: PDF

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Tsuda, Ryo; Thal, Eckhard; Soltau, Nils; Wiesner, Eugen (Mitsubishi Electric Europe, Germany)
Iura, Shinichi; Negishi, Tetsu (Mitsubishi Electric Corporation, Japan)

Mitsubishi Electric has developed the first high voltage (HV) IGBT dual power module with highest power density in the LV100 package [1] [2] to meet the future requirements in traction application. This new dual package, LV100 is a standard package that is suitable for using Si and SiC chips [3]. The LV100 module outline and comparison to the conventional package are shown in Fig. 1. To achieve inverter modularity and scalability, the possibility of parallel operation with these power modules is an important necessity which requires thorough investigation and optimization because the performance of modules during parallel operation directly influences the inverter performance. Apart from external factors such as the DC-link bus bar design and gate driver design, the electrical parameters of the module itself has a significant impact on the inverter performance. To enhance reverse recovery mode for parallel module operation, new HV diode for LV100 package was developed. This diode is the relaxed field of cathode (RFC) diode which was optimized to have strong positive temperature coefficient and high robustness for parallel operation. In this paper, the optimization of the diode used in LV100 600A/3300V package is investigated. In addition, evaluation results of parallel connected LV100 package are shown.