Evaluation of Miller Capacitance Depending on Drain-Source Voltage when SJ HV Power MOSFETs are in Reverse Mode

Konferenz: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05.06.2018 - 07.06.2018 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2018

Seiten: 5Sprache: EnglischTyp: PDF

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Parisi, Carmelo; Consentino, Giuseppe; Martino, Valeria Cinnera; Damante, Yosef; Grimaldi, Antonio Giuseppe (STMicroelectronics, Italy)
Murabito, Domenico (University of Calabria, Italy)

Miller capacitance, sometime called Crss, monotonic decreases increasing Vds. This model is surely confirmed when considering power MOSFETs realized in Planar technology. At any rate, when considering Super Junction devices and, in particular, newest High Voltage power MOSFETs, it was experimentally observed that Crss does not decrease monotonic by increasing Vds. In fact, in these last devices, Crss firstly decreases down to very low values and then monotonic increases up to reach a plateau region.This paper studies the above exposed phenomenon basing results either on TCAD simulations or on experimental data by introducing a simplified mathematical model which explains the empirical behavior of Crss in SJ power MOSFETs.