High Performance 4H-SiC MOSFETs with Optimum Design of Active Cell and Re-Oxidation

Konferenz: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05.06.2018 - 07.06.2018 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2018

Seiten: 6Sprache: EnglischTyp: PDF

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Tanioka, Toshikazu; Ebiike, Yuji; Oritsuki, Yasunori; Imaizumi, Masayuki; Tarutani, Masayoshi (Mitsubishi Electric Corporation, Power Device Works, Japan)

Characteristics of our two varieties 2nd generation planar 4H-SiC MOSFETs are presented. By applying an optimized cell structure, newly designed 1200 V-class SiC-MOSFETs for larger current applications exhibit very low specific on-resistance of 3.0 mOmega·cm 2 at 25 °C along with low switching losses. We have also realized 2nd generation high-threshold-voltage 1200 V-class SiC-MOSFETs for small current applications by employing our unique re-oxidation technique. The SiC-MOSFETs exhibit low specific on-resistance of 4.4 mOmega·cm 2 at 25 °C with the highest level threshold voltage of 4.5 V. By utilizing these SiC-MOSFETs in accordance to power system requirements, applications of SiC power devices will expand in much larger fields.