650 V E-Mode GaN HEMT Switching at 1 MHz for Travel Adapter Applications
Konferenz: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05.06.2018 - 07.06.2018 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2018
Seiten: 8Sprache: EnglischTyp: PDF
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Autoren:
Starks, Ann; Chen, Zhiyang; Cargile, Mike (ON Semiconductor, USA)
Inhalt:
This paper provides important design considerations and performance results for an elevated-frequency travel adapter application using a 650V E-GaN transistor. Performance, circuit functionality, and design challenges are presented for a 65W QR flyback travel adapter application. Steps taken to elevate the switching frequency of the adapter are addressed, and the ON Semiconductor 650V Enhancement-mode gallium nitride (E-GaN) high-electron mobility transistor (HEMT) in-circuit performance is presented.