Power p-GaN HEMT Under Unclamped Inductive Switching Conditions

Konferenz: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05.06.2018 - 07.06.2018 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2018

Seiten: 5Sprache: EnglischTyp: PDF

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Marek, Juraj; Satka, Alexander; Jagelka, Martin; Chvala, Ales; Pribytny, Patrik; Donoval, Martin; Donoval, Daniel (Slovak University of Technology in Bratislava, Slovakia)

In this paper we present the results of Unclamped Inductive Switching (UIS) measurements of power GaN HEMTs comprised of p-GaN gates. Typical test waveforms and basic description of effects during discharging period of inductor are presented and discussed. It is experimentally confirmed that p-GaN HEMT devices exhibit intrinsic UIS capability. Influence of different inductances as well as different supply voltage is also analyzed.