Wafer Level Embedding Technology for Packaging of Planar GaN Half-Bridge Module in High Power Density Conversion Applications.

Konferenz: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05.06.2018 - 07.06.2018 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2018

Seiten: 8Sprache: EnglischTyp: PDF

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Manier, Charles-Alix; Klein, Kirill; Wuest, Felix; Gernhardt, Robert; Oppermann, Hermann (Fraunhofer-Institute IZM, Germany)
Cussac, Philippe (CIRTEM, France)
Andzouana, Sophie; Mitova, Radoslava (Schneider Electric, France)
Lang, Klaus-Dieter (Fraunhofer-Institute IZM, Germany & Technical University Berlin, Germany)

For the development of GaN-based power solutions, electronic packaging aspects like high temperature capability, low parasitics and low thermal resistance have to be considered for final robust systems. A new fabrication process is here presented for packaging of GaN bare devices in form of silicon-based packages using wafer level back-end processes. Compact planar half-bridge modules were fabricated at 200 mm wafer scale with 650 V rated single GaN bare die. The package demonstrates voltage breakdown up to 650 V with leakage current as low as 250 nA with top-bottom electrical isolation of 1 nA at 2500V. A thermal resistance RthJC of around 0.4 K/W was also characterized. Implementation in power solutions has been first evaluated and first results will be presented in this paper.