Very Low Stray Inductance, High Frequency 1200 V_ 2 mOhms Full SiC MOSFET Phase Leg Module.
Konferenz: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05.06.2018 - 07.06.2018 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2018
Seiten: 8Sprache: EnglischTyp: PDF
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Autoren:
Bontemps, Serge; Doumergue, Laurent-Pierre (Microsemi Power Module Products, France)
Inhalt:
This paper presents the characterization of a new 1200V / 2 mOhms Full SiC MOSFET phase leg module featuring a very low stray inductance within the standard 62 x 108 mm 2 package. This module is built with an AlSiC base plate, AMB on Si3N4 substrates for best thermal performance and longterm reliability. The module internal design with integrated DC link busbars arranged in strip line allow a parasitic loop inductance below 5 nH and the module pin out arrangement facilitates a bus bar arrangement with an overall parasitic inductance below 10 nH (from the DC link down to the power semiconductors).