Comparative Study of Full SiC Power Module in 1 MHz, 600 V, 50 A Switching Operation
Konferenz: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05.06.2018 - 07.06.2018 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2018
Seiten: 5Sprache: EnglischTyp: PDF
Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Autoren:
Hayashi, Kei; Funaki, Tsuyoshi (Osaka University, Japan)
Michikoshi, Hisato; Fukuda, Kenji (Advanced Power Electronics Research Center, Adavnced Industrial Science and Technology, Japan)
Inhalt:
This paper develops 1200V, 50A full SiC half bridge power module, which embeds C snubber and gate resistor. Embedded C snubber suppresses surge voltage in fast switching operation, and gate resistors avoid parasitic gate oscillation of parallel connected SiC MOSFET in the module. 1MHz switching operation of developed module for 600V DC voltage and 100A peak to peak load current is experimentally confirmed. The switching characteristic of developed power module is compared with commercial SiC power modules in the same test condition and superior switching performance of the developed power module is presented.