Analysis of 1200 V Si-SiC-Hybrid Switches for Resonant Applications

Konferenz: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05.06.2018 - 07.06.2018 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2018

Seiten: 8Sprache: EnglischTyp: PDF

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Meissner, Michael; Fahlbusch, Sebastian; Luethke, Daniel; Hoffmann, Klaus F. (Helmut Schmidt University, Faculty of Electrical Engineering, Department of Power Electronics, Germany)

Hybrid switches consisting of a silicon IGBT and a silicon carbide MOSFET are an approach for power loss reduction in resonant topologies. Potentials and performance are analysed and discussed.