Sintering Cu Paste Die-Attach for High TJ Power Devices

Konferenz: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05.06.2018 - 07.06.2018 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2018

Seiten: 3Sprache: EnglischTyp: PDF

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Nagao, Shijo; Gao, Yue; Shimoyama, Akio; Suganuma, Katsuaki (Institute of Scientific and Industrial Research, Japan)
Yamauchi, Shinichi; Sakaue, Takahiko; Kamikoriyama, Yoichi (Mitsui Mining & Smelting, Japan)

A sinter joining method with micron-submicron me tal Cu particles is proposed for high TJ semicond uctor die-attach such as application in emerging wide-bandgap high-power devices. The results sh ow that high bond strength exceeding 30 MPa ca n be realized by bonding at 300 °C in N2 gas und er low pressure. The obtained high strength in the mild bond-process conditions promises the opport unity of thermo-stable die-attach technology requi red for power device packaging. Die-attach for act ual SiC device was also prepared followed by vari ous environmental aging tests