Impact of I2t Capability of RC-IGBT and Leadframe Combined Structure in xEV Active Short Circuit Survival

Konferenz: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05.06.2018 - 07.06.2018 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2018

Seiten: 5Sprache: EnglischTyp: PDF

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Nakano, Hayato; Osawa, Akihiro; Higuchi, Keiichi; Kitamura, Akio; Inoue, Daisuke; Yoshida, Souichi; Gohara, Hiromichi; Otsuki, Masahito (Fuji Electric Co., Ltd, Japan)

This paper describes the investigate results of I2 t capability for IGBT module used for xEV powertrain application. I (esp 2) t experiment and simulation evaluations are done by RC-IGBT or the conventional FWD with bondwires structure. As a result, RC-IGBT(wire) has 80% higher I2 t capability compared with FWD in the case of diode active area comparison. In addition, RC-IGBT( leadframe) and RC-IGBT(bondwires) are also evaluated by experimental and simulational approaches. As a result, RCIGBT( leadframe) has additional 33% increase in I 2 t compared to RC-IGBT(wire). Over all, RC-IGBT (leadframe) is x2.4 higher than FWD (bondwires).