An Efficient Active Mains Rectifier Bridge Based on Bipolar Technology
Konferenz: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05.06.2018 - 07.06.2018 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2018
Seiten: 5Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Wood, John (Silicon Contact, UK)
Koper, Nick (WeEn Semiconductors UK Ltd, UK)
Mains rectifier bridges are typically used in 100 – 240 V(RMS), 50 – 60 Hz utility mains operated systems. Traditionally these bridges consist of 4 individual silicon pn-junction diodes. Although this rectification method is simple and straightforward, power loss in the diodes can be substantial. The combination of bipolar semiconductor technology and an innovative driving method enables the implementation of a cost-effective and efficient active mains rectifier bridge using silicon bipolar junction transistors (BJTs). With the new Graetz-like rectifier bridge in the rectification stage of a power converter, the bridge power dissipation can be reduced by 70% and the overall system efficiency is increased by 0.5% to 1.0%. The power saving allows for more compact equipment design and, in power converters that are in continuous operation, the active bridge pays for itself within one year through energy savings.