Discrete 1200 V SiC MOSFETs – SMD Package Benefits and Impacts of Multiple Device and Circuit Parameters Mismatch in High Power Parallel Applications

Konferenz: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05.06.2018 - 07.06.2018 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2018

Seiten: 6Sprache: EnglischTyp: PDF

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Jagannathan, Rajagopalan; Hoenes, Hans-Peter; Duggal, Tushar; Atzeri, Marco (ON Semiconductor, Germany)

The full potential of Silicon Carbide (SiC) based power semiconductors can be exploited only when the device structure, package and application circuit parameters are all optimized, especially for fast switching high power applications. Several parameters impact the static, thermal and switching characteristics. This work focuses on the performance benefits of the newly developed 1200V SiC MOSFETs in SMD package (D2PAK/TO263-7leads) with Kelvin source, the impact of several device parameters mismatch under parallel operation as well as the impact of gate driver and layout variations.