Integrated Cooling Channels in Direct Bonded Copper Substrate for Silicon Carbide MOSFETs

Konferenz: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05.06.2018 - 07.06.2018 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2018

Seiten: 8Sprache: EnglischTyp: PDF

Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt

Stippich, Alexander; Battefeld, Maximilian L. J.; Doncker, Rik W. De (Institute for Power Electronics and Electrical Drives (ISEA), RWTH Aachen University, Aachen, Germany)

A cooling structure etched into a direct bonded cop- per substrate is examined for new wide band gap silicon carbide devices. Simulations are carried out for an initial setup to test the feasibility of such a cooling structure. For further optimization, simula- tions with different material combinations and ge- ometry parameters are conducted for silicon car- bide devices. An optimized prototype is manufac- tured for experimental verification and shows good agreement with the simulations. It is demonstrated that integrated micro-channel structures etched into direct copper substrates provide a compact and ef- ficient cooling solution for power semiconductors.