Development of 140 × 100 Footprint HV IGBT Module

Konferenz: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05.06.2018 - 07.06.2018 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2018

Seiten: 4Sprache: EnglischTyp: PDF

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Li, Daohui; Qi, Fang; Packwood, Matthew; Li, Xiang; Zhou, Wei (Dynex Semiconductor Ltd., UK)
Wang, Yangang; Luo, Haihui; Dai, Xiaoping; Liu, Guoyou (CRRC Times Electric Co. Ltd, Zhuzhou, China)

New type of 3.3kV/450A half-bridge IGBT module is one of key standardised packages for future high voltage power electronics market. This kind of 140X100 footprint module has been under-developing in Dynex Semiconductor and CRRC Times Electric Zhuzhou. 3D based design and simulation, such as EM, circuitry, thermal, mechanical simulation methods have been utilised. The EM-circuitry simulations have shown a very balance current at switching stage of module operation. Latest assembly processes and materials for high voltage packaging have been used, such as high isolation ceramic substrate, low inductance busbar via ultrasonic welding (USW) process, stand-off spacer for solder layer, high isolation silicone gel, et al.