Thermal Characteristics Evaluation of Wide Band Gap Power Devices

Inhalt:
To allow higher junction temperatures than those of Si, emerging wide band gap semiconductors like SiC or GaN requires advanced packaging technologies suitable for high power modules. Hence thermal property evaluations of various packaging materials and assembled package structures are required for optimized thermal management of module designs. Here we discuss three methods of thermal measurements useful for characterizations, optimization of module design, and reliability investigations for various packaging materials.