H³TRB Test on 1.2 kV SiC MOSFETs

Konferenz: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05.06.2018 - 07.06.2018 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2018

Seiten: 6Sprache: EnglischTyp: PDF

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Hanf, Michael; Zorn, Christian; Kaminski, Nando (Institute for Electrical Drives, Power Electronics, and Devices (IALB), University of Bremen, Germany)
Domeij, Martin; Allerstam, Fredrik; Buono, Benedetto; Franchi, Jimmy (ON Semiconductor, Kista, Sweden)
Neyer, Thomas (ON Semiconductor, Munich, Germany)

Reliability characterisation of SiC devices is an ongoing activity. For this work, four different splits of opened and gel-filled, 1200 V SiC MOSFETs in TO247 housings were tested in H³TRB for almost 2000 hours with monitoring of the leakage currents. In addition, electrical measurements and visual inspection were performed at intermediate time-steps. The objectives were investigating different passivation structures as well as the influence of a silicone gel encapsulation on the devices’ humidity degradation.