Three-Level-Gate-Driver to Run Power Transistors in the Saturation Region for Junction Temperature Control

Konferenz: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05.06.2018 - 07.06.2018 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2018

Seiten: 8Sprache: EnglischTyp: PDF

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Ruthardt, Johannes; Fischer, Manuel; Felix Woelfle, Julian; Troester, Nathan; Roth-Stielow, Joerg (Institute for Power Electronics and Electrical Drives, University of Stuttgart, Germany)

One of the main influencing factors on reliability and lifetime of power semiconductor devices is the thermal stress induced by load alternation. Junction temperature control systems are able to reduce the thermal stress. To control the junction temperature an option to influence the power losses of the power semiconductor devices is required. The proposed three-level-gate-driver offers the option to run power transistors in the saturation region and therefore to produce additional losses in order to control the junction temperature.