650 V Silicon Carbide MOSFETs in Totem-Pole Bridgeless PFC Design Achieves High Efficiency (80+ Titanium) without adding Complexity and Cost
Konferenz: PCIM Europe 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05.06.2018 - 07.06.2018 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2018
Seiten: 8Sprache: EnglischTyp: PDF
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Autoren:
Salman, Adil; Ayerbe, Edgar; Solovey, James; Moxey, Guy; Ryu, Sei-Hyung; Barkley,Adam (Wolfspeed, A Cree Company, 3028 E Cornwallis Rd, Durham, NC 27709, USA)
Inhalt:
This paper will illustrate the performance benefits of Wolfspeed’s 650 V, 60 mOmega, (C3MTM) SiC MOSFET (P/N: C3M0060065J) designed by using the latest advances in SiC MOSFET technology. This newly designed SiC MOSFET offers low body diode reverse recovery, high blocking voltage and low on-state resistance over temperature range. This paper will also cover the application of Wolfspeed’s 650 V, 60 mOmega, (C3MTM) SiC MOSFET (P/N: C3M0060065J) in low inductance package (TO-263-7) in the design of a bridgeless totempole PFC system that, when combined with DC/DC circuit, can achieve system level efficiency suitable for 80+ Titanium standard. Experimental results of the bridgeless totem-pole PFC topology yield a peak efficiency > 98.37%, THD < 5%, and higher power density than existing silicon 80+ platinum solutions with all at an equivalent or less EBOM cost.