Low power loss level-shifter-based gate driver ICs enable high-frequency switching

Konferenz: PCIM Asia 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
26.06.2018 - 28.06.2018 in Shanghai, China

Tagungsband: PCIM Asia 2018

Seiten: 3Sprache: EnglischTyp: PDF

Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt

Song, Jinsheng (Infineon Technologies Americas Corp., USA)

In the power electronics field, high switching frequency can offer certain benefits for applications and systems. However, it will increase the power loss of the driver IC. To achieve high switching frequency, a new driver IC technology is required. Infineon SOI technology is one of the key enablers for level-shifter-based gate driver ICs, which provide low power loss, good noise immunity and high reliability. This paper presents the advantages of Infineon SOI gate-driver technology, and its benefits for applications.