A Synchronous eGaN® FET Class E Rectifier for a 30 W Highly Resonant Wireless Power Receivers
Konferenz: PCIM Asia 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
26.06.2018 - 28.06.2018 in Shanghai, China
Tagungsband: PCIM Asia 2018
Seiten: 6Sprache: EnglischTyp: PDF
Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Autoren:
Rooij, Michael de; Zhang, Yuanzhe (Efficient Power Conversion, USA)
Inhalt:
6.78 MHz highly resonant wireless power receivers based on the AirFuel(TM) standard experience high rectifier losses when using Schottky diodes and can fail to meet the thermal limit requirements for many products such as laptops. This work introduces a rectifier based on a synchronous switch eGaN FET in a class E topology for use in 30 W highly resonant wireless power receivers. Results show that the proposed class E rectifier achieved 20% lower loss in system power stage and higher system efficiency compared to a Schottky diode full-bridge rectifier.