Low Inductance 3.3kV/1800A High Power IGBT Module
Konferenz: PCIM Asia 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
26.06.2018 - 28.06.2018 in Shanghai, China
Tagungsband: PCIM Asia 2018
Seiten: 4Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Li, Daohui; Qi, Fang; Wang, Yangang (Dynex Semiconductor Ltd, UK)
Zhou, Wei; Chang, Guiqing; Peng, Yongdian; Luo, Haihui; Dai, Xiaoping; Liu, Guoyou (CRRC Times Electric Co. Ltd, Zhuzhou, China)
In traction, renewable energy, electrical vehicle and other industry application areas, high voltage, high power IGBT modules have been used in modern switching power electronics applications. 3.3kV/1800A IGBT module with standard 140mm x 190mm footprint is one type of new rating module packages to provide higher power than currently widely utilised 3.3kV/1500A rating modules. With the increase of current rating, low inductance for power terminals and overall module’s electrical performance are critical together with the corresponding thermal /mechanical performance. In the new module package design, new type of internal layout and assembly processes have been utilised during the development of the high voltage module package. Newly designed 3D substrate-busbar assembly has shown >40% lower inductance and high reliability than the traditional 2D structural power terminals. Overall parasitic parameters for module packaging have been successfully extracted and simulated together with IGBT/FRD chip devices model to investigate the static and dynamic performance at the design stage. The structure optimisations have been carried out with the assistance of powerful 3D simulation packages regarding to electromagnetic, electrical, thermal / mechanical aspects.