High Performance 2nd Generation Trench Schottky Diodes for Switch Mode Power Supplies
Konferenz: PCIM Asia 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
26.06.2018 - 28.06.2018 in Shanghai, China
Tagungsband: PCIM Asia 2018
Seiten: 4Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Hu, Aibin (WeEn Semiconductors, China)
Huang, Ed (WeEn Semiconductors, UK)
Schottky diodes are widely used as hyperfast rectifiers in modern switched mode power supplies. Recently, we have brought to market our 2nd generation (G2) Schottky diodes, which employ a field-relieving trench cell structure. Compared with our 1st generation (G1) planar Schottky diodes, the 2nd generation achieves superior performance in reduced on-state and switching losses through optimized use of Trench cells. The diode’s avalanche capability is also enhanced, giving it high ruggedness under various surge conditions. The 2nd generation Schottky diodes can find applications in many different converter topologies, such as fly-back, LLC and other circuits.