Status and Trend of SiC device Power module Packaging

Konferenz: PCIM Asia 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
26.06.2018 - 28.06.2018 in Shanghai, China

Tagungsband: PCIM Asia 2018

Seiten: 4Sprache: EnglischTyp: PDF

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Qi, Fang; Li, Daohui; Wang, Yangang; Li, Helong (Dynex Semiconductor Ltd, UK)
Zhou, Wei; Chang, Guiqing; Dai, Xiaoping (CRRC Times Electric Co. Ltd, Zhuzhou, China)

Qualified power SiC device need to meet comprehensive requirements in aspects of high-speed switching, high temperature, high power density and high voltage. There are challenges on lower module stray inductance, high reliability package material, advanced cooling and high voltage insulation material. These challenges have driven the development of power packaging technology intensively. Innovation in materials, interconnections, package structure and processing techniques is leading to enormous improvements in power modules. In this paper, the technical development of and trends in power module packaging are evaluated by examining technical details with examples of current market module package products. The issues and development directions for future SiC device power module packaging are also discussed.