High reliability and robust monolithic 1200 V three-phase gate driver with integrated bootstrap diode for multiple applications
Konferenz: PCIM Asia 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
26.06.2018 - 28.06.2018 in Shanghai, China
Tagungsband: PCIM Asia 2018
Seiten: 5Sprache: EnglischTyp: PDF
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Autoren:
Song, Jinsheng; Raffo, Diego; Chu, Weidong (Infineon Technologies Americas Corp., USA)
Inhalt:
A higher integration level and higher performance are two important goals for level-shifter- based gate driver ICs. Infineon SOI (Silicon-On-Insulator) technology offers integrated boot-strap diodes and lower level-shifter losses, which provide higher reliability, low power dissipation, compact PCB design, and lower overall BOM cost. This paper describes the new Infineon 1200 V three-phase gate driver IC, and its superior performance and robustness. System applications can significantly benefit from this new gate driver IC product.