Parallel Connection of Silicon Carbide MOSFETs for Electric Vehicle Application
Konferenz: PCIM Asia 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
26.06.2018 - 28.06.2018 in Shanghai, China
Tagungsband: PCIM Asia 2018
Seiten: 4Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Liu, Wei; Liang, Xiaoguang; Chiron, Thomas (ZF Japan Co., Ltd., Japan)
The paralleling of Si MOSFETs and IGBTs is researched and is well understood in several different applications. There is a little research to study the nuances related to paralleling the higher speed SiC MOSFET devices compared to Si devices. Since SiC-MOSFETs are relatively new and mostly available in lower current ratings, there is a great desire to parallel devices to use them for higher power applications. In this paper, the parameters that affect the static and dynamic current sharing behavior of the devices have been studied.