A Reliable Gate Driver with Desaturation and Over-Voltage Protection Circuits for SiC MOSFET
Konferenz: PCIM Asia 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
26.06.2018 - 28.06.2018 in Shanghai, China
Tagungsband: PCIM Asia 2018
Seiten: 5Sprache: EnglischTyp: PDF
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Autoren:
Yin, Shan (Microsystem & Terahertz Research Center, Institute of Electronics Engineering, China Academy of Engineering Physics, Chengdu, China)
Liu, Yitao (College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, China)
Inhalt:
The high switching speed and large pulse current of SiC MOSFET require a reliable and fast gate driver with protection circuits. In this work, a gate driver with desaturation and over-voltage protection circuits is designed for SiC MOSFET based on the off-the-shelf driver IC. It is experimentally verified by subjecting SiC MOSFET to the hard switching fault with a fixed DC-bus voltage of 600 V. This gate driver shows a response time (fault current on to completely off) of 2.2 mus, and the voltage overshoot issue is successfully suppressed within a clamped voltage of 780 V.