A Reliable Gate Driver with Desaturation and Over-Voltage Protection Circuits for SiC MOSFET
Konferenz: PCIM Asia 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
26.06.2018 - 28.06.2018 in Shanghai, China
Tagungsband: PCIM Asia 2018
Seiten: 5Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Yin, Shan (Microsystem & Terahertz Research Center, Institute of Electronics Engineering, China Academy of Engineering Physics, Chengdu, China)
Liu, Yitao (College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, China)
The high switching speed and large pulse current of SiC MOSFET require a reliable and fast gate driver with protection circuits. In this work, a gate driver with desaturation and over-voltage protection circuits is designed for SiC MOSFET based on the off-the-shelf driver IC. It is experimentally verified by subjecting SiC MOSFET to the hard switching fault with a fixed DC-bus voltage of 600 V. This gate driver shows a response time (fault current on to completely off) of 2.2 mus, and the voltage overshoot issue is successfully suppressed within a clamped voltage of 780 V.