Higher efficiency and power density of variable speed drives with new TRENCHSTOP(TM) IGBT7
Konferenz: PCIM Asia 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
26.06.2018 - 28.06.2018 in Shanghai, China
Tagungsband: PCIM Asia 2018
Seiten: 6Sprache: EnglischTyp: PDF
Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Autoren:
Shen, Song (Infineon Technologies China Co., Ltd., China)
Sahan, B.; Puyadena, A.; Brodt, A.; Lenze, A.; Mueller, C. R. (Infineon Technologies AG, Max-Planck-Str. 5, 59581 Warstein, Germany)
Jaeger, C. (Infineon Technologies AG, Am Campeon 1-15, 85579 Neubiberg, Germany)
Inhalt:
This paper reveals the system performance of Infineon’s new generation of IGBT and diode technology. IGBTs and diodes have been optimized with respect to the key requirements of variable speed drives. Considering typical switching slopes and frequencies, low static losses and an optimized switching performance for 5kV/mus have been achieved. This leads to a significant improvement in power density and power semiconductor efficiency. IGBT7 allows 175 °C under overload conditions which offers benefits in the application. Finally, the increase of power density and achievement of higher efficiency with the new TRENCHSTOP(TM) IGBT7 has been highlighted by simulations and verified by an experimental inverter test.