The third generation 6.5kV HiPak2 module rated 1000A and 150°C

Konferenz: PCIM Asia 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
26.06.2018 - 28.06.2018 in Shanghai, China

Tagungsband: PCIM Asia 2018

Seiten: 8Sprache: EnglischTyp: PDF

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Chen, M.; Papadopoulos, C.; Tsyplakov, E. (ABB Switzerland Ltd, Semiconductors, Switzerland)

In this paper, we introduce a new 6.5 kV 150 °C HiPak2 module rated at 1000 A, based on the Enhanced Planar (EP) IGBT and Field Shielded Anode (FSA) diode concepts. Design modifications for both the Insulated Gate Bipolar Transistor (IGBT) and diode have been introduced to achieve lower leakage currents and hence an increase in the maximum operating junction temperature. Furthermore, the devices have seen an optimization in the termination width and silicon thickness to achieve larger active areas and a higher current capability. A new robust passivation has led much improved device reliability. In addition, by re-designing the ceramic substrate layout, an increase of the diode chip size was possible to match the improved IGBT performance. The paper presents design details and experimental results both at chip and module levels for the finalized 6.5 kV 150 °C 1000 A rated HiPak2 module.