Influence of negative voltage between gate and emitter to the turnoff behavior of IGBT device
Konferenz: PCIM Asia 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
26.06.2018 - 28.06.2018 in Shanghai, China
Tagungsband: PCIM Asia 2018
Seiten: 6Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Yukawa, Fumio; Takaku, Taku; Fujisawa, Naoto; Igarashi, Seiki (Fuji Electric Co., Ltd., Japan)
Yano, Koji (University of Yamanashi, Japan)
This paper describes the dependence of turn-off switching characteristics on negative gate voltage (-VGE) for IGBT devices. Although the value of - VGE affects the turn-off switching characteristic, that has not been investigated in detail. The experimental result shows that the –VGE affects dvCE/dt and turn-off energy when the gate resistance is relatively large. Because the dvCE/dt is strongly related the discharging current of CGC. In case of the small resistance, the dvCE/dt does not change by the negative gate voltage and gate resistance, because there is a limit of dvCE/dt. In this condition, the load current can be kept only by the swept-out current.